Tesfaye Abtew
Department of Physics, North Carolina State University,
Center for High Performance Simulation,
Raleigh NC, USA


    
NC State University Physics (OU) OU Library








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Fig(a)    Fig(b)    Fig(c)   

Recent Result: Fig(a)
Fluctuating Bond Center Ditachment (FBCD) assisted diffusion: The H (shown in yellow) initially bonded to a Si atom becomes a FBC with the approach of another Si, is ejected out and eventually forms another bond.
Recent Result: Fig(b)
Normalized temporal distribution of RSi-Si as a function of Si-H-Si bond angle in a-Si:H: red: most frequent visitation and green least frequent. Submitted to EPL   © T. A. Abtew, F. Inam, and D. A. Drabold, Ohio University, OH      
Recent Result: Fig(c)
Si H2 structure formed after light soaking with proton distance of 2.39A. Published: PRB 74 085201 (2006) and JPCM 18 L1 (2006 )  © T. A. Abtew and D. A. Drabold, Ohio University, OH      

DIFFUSION mechanisms of H in a-Si:H

Area of Research:

  • nano-electronics;
  • ab initio simulation of complex materials;
  • Simulation of photoresponse;
  • Diffusion mechanisms in amorphous materials:
  • Variable Range Hopping and Conductivity in amorphous semiconductors.



      Last update: Apr., 2007 © Tesfaye Abtew, North Carolina USA